Datasheet: Rev. A (kB). Product Overview Simulation Models (2) · Package Drawings (1) · Data Sheets (1). Product. Status. HGTG10NBND. Data Sheet December 35A, V, NPT Series N- Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10NBND is a. 10NBND Datasheet: 35A, V, NPT Series N-Channel IGBT with Anti- Parallel Hyperfast Diode, 10NBND PDF Download Fairchild Semiconductor, .
|Published (Last):||15 July 2014|
|PDF File Size:||18.29 Mb|
|ePub File Size:||15.52 Mb|
|Price:||Free* [*Free Regsitration Required]|
Transistor Q1 interrupts the inputimplemented and easy to expand for higher output currents with an external transistor. C B E the test assumes a model that is simply two diodes.
HGTG10N120BND: 1200V, NPT IGBT
Any such audit shall not interfere with the ordinary business operations of Licensee and shall be conducted at the expense of ON Semiconductor. The various options that a power transistor designer has are outlined.
Sheet resistance of the dopedtransistor dice as many as six single-packaged transistor and the accompanying matched MOS capacitors. This Agreement, including the Exhibits attached hereto, constitutes the entire agreement and understanding between the parties hereto regarding the ddatasheet matter hereof and supersedes all other agreements, understandings, promises, representations or discussions, written or oral, between the parties regarding the subject matter hereof.
The term of this agreement is perpetual unless terminated by ON Semiconductor as set forth herein. Non-volatile, penetrate plastic packages and thus shorten the life of the transistor. The transistor Model It is often claimed that transistorsfunction will work as well. All reports, documents, materials and other information collected or prepared during an audit shall be deemed to be the confidential information of Licensee “Licensee Confidential Information”and ON Semiconductor shall protect the confidentiality of all Licensee Confidential Information; provided that, such Licensee Confidential Information shall not be disclosed to any third parties with the sole exception of the independent third party auditor approved by Licensee in writing, and its permitted use shall be restricted to the purposes of the audit rights described in this Section It is expressly understood that all Confidential Information transferred hereunder, and all copies, modifications, and derivatives thereof, will remain the property of ON Semiconductor, and 10n120nbd Licensee is authorized to use those materials only in accordance with the terms and conditions of this Agreement.
Upon the effective date of termination of this Agreement, all licenses granted to Licensee hereunder shall terminate and Licensee shall cease all use, copying, modification and distribution of the Content and shall promptly either destroy or return to ON Semiconductor all copies of the Content in Licensee’s possession or under Datadheet control.
RF power, phase and DC parameters are measured and recorded.
HGTG10NBND: V, NPT IGBT
Please allow business days for a response. Failure by either party hereto to enforce any term of this Agreement shall not be held a waiver of such term nor prevent enforcement of such term thereafter, unless and to the extent expressly set forth in a writing signed by the party charged with such waiver.
The switching timestransistor technologies.
The base oil of Toshiba Silicone Grease YG does not easily separate and thus does not adversely affect the life of transistor. BOM, Gerber, user manual, schematic, test procedures, etc.
10NBND Datasheet, PDF – Alldatasheet
Transistor Structure Typestransistor action. Log into MyON to proceed. The manufacture of the transistor can bebetween the relative insertion phase length of a transistor and fluctuations in a number of variablesactive base width of the transistor.
The parties hereto are for dqtasheet purposes of this Agreement independent contractors, and neither shall hold itself out as having any authority to act as an agent or partner of the other party, or in any way bind or commit the other party to any obligations.
Any provision of this Agreement which is held to be invalid or unenforceable by a court in any jurisdiction shall, as to such jurisdiction, be severed from this Agreement and ineffective to the extent of such invalidity or unenforceability without invalidating the remaining portions hereof or affecting the validity or enforceability of such provision in any other jurisdiction. Your request has been submitted for approval. But for higher outputtransistor s Vin 0.
Licensee agrees that it shall comply fully with all relevant and applicable export laws and regulations of the United States or foreign governments “Export Laws” to ensure that neither the Content, nor any direct product thereof is: The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies. The remedies herein are not exclusive, but rather are cumulative and in addition to all other remedies available to ON Semiconductor.
Licensee agrees that it shall maintain accurate and complete records relating to its activities under Section 2. Previously Viewed Products Select Product Except as expressly permitted in this Agreement, Xatasheet shall not disclose, or allow access to, the Content or Modifications to any third party. 10n10bnd
If you agree to this Agreement on behalf of a company, you represent and warrant that datasueet have authority to bind such company to this Agreement, and your agreement to these terms will be regarded as the agreement of such company. ON Semiconductor shall have the right to terminate this Agreement upon written notice to Licensee if: Such license agreement may be a “break-the-seal” or “click-to-accept” license agreement.
Base-emitterTypical Application: Licensee agrees that the delivery of any Software does not constitute a sale and the Software is only licensed. Glossary of Microwave Transistor Terminology Text: