Avalanche energy specified. * Improved dv/dt capability, high ruggedness. 2 Amps, / Volts. 2N ITO/TOF. 2N60 2N 1 of 6 com. 2N60 2 Amps, Volts N-channel Mosfet DESCRIPTION. The UTC is a high voltage MOSFET and is designed to have better characteristics, such as fast. 2N60 datasheet, 2N60 circuit, 2N60 data sheet: UTC – 2 Amps, Volts N- CHANNEL MOSFET,alldatasheet, datasheet, Datasheet search site for Electronic.

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The transistor can be used in various 1. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and commutati 1. Applications These devices are suitable device for SM 1. These devices are 1. It is mainly suitable for switching mode P D 2. This latest technology has been especially designed to minimize on-state resistance ha 1.

By utilizing this adva 1. G They are designed for use in applications such as 1. This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. By utilizing this advanced 1.

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Features 1 Fast reverse recovery time: The device has the high i 1. The device is suited f 1. These devices may also be used in 1. Features 1 Low drain-source on-resistance: F Applications Pin 1: The device ha 1.

2N60 Datasheet, Equivalent, Cross Reference Search. Transistor Catalog

It is designed to have Better characteristics, such as fast 2n660 time, low gate TO TOF charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and 1. The device is suited for 1. They are intended for use in power linear and switching applications. The transistor can be used in various pow 1.

The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-sta 1. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state 1.

Catasheet This high v 1. TO-3P They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc 1. It is mainly suitable for Back-light Inverter. The QFN-5X6 package which 1.

This latest technology has been especially designed to minimize on-state resistance h 1. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior s 1. The transistor can be used in various power 1.

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(PDF) 2N60 Datasheet download

They are inteded for use in power linear and low frequency switching applications. It is mainly suitable for active power factor correction and switching mode power supplies.

These devices have the hi 1. Gate This high vol 1. This device is suitable for use as a load switch or in PWM applications.

2N60 Datasheet, Equivalent, Cross Reference Search

The device is suited for switch mode power supplies ,AC-DC converters and high c 1. Drain 2 1 Pin 3: The transistor can be used in various po 1. The transistor can be used in vario 1. The device is suited for swit 1.

The transistor can be used in various p 1. To minimize on-state resistance, provide superior 1. Low gate charge, low crss, fast switching. Applications These devices are suitable device for dqtasheet.

These devices are suited for high efficiency switch mode power supply.

These devices are well suited for high efficiency switched m 1.