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In a amjc package form, Vd1 and Vd2 terminals are commonly connected to the Vdd terminal. Junction operating temperature will directly affect the device MTTF.

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This data represents package part performances, and does not contain test fixture losses. Integrated RF power detector? A typical measured detector voltage versus output power at 18GHz is shown Figure Vofs can either be characterized over temperature and stored in a lookup table, or it can be measured at two temperatures and a linear fit used to calculate Vofs at any temperature.

These ratings apply to each individual FET 5. Input port ammmc matched For narrowband applications, customer may obtain optimum matching and gain with an additional matching circuit? This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies 9.

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Typical ESD diode current versus diode voltage for connected diodes in series is shown in Figure Minor improvements in performance are possible depending on the application.

Typical S11 over temperature Figure Combinations of supply voltage, drain current, input power, and output power shall not exceed PD.

AMMC-6408 6-18 GHz 1W Power Amplifier

Vofs can be measured at a single reference temperature. No ground wires are needed since ground connections are made with plated through-holes to the backside of the device. Typical IM3 level vs. The drift error will be less than 0. There are three methods to calculate Vofs: An optional output power detector network is also provided. A single DC gate supply connected to Vg will bias all gain stages.

Observe Precautions for handling electrostatic sensitive devices. Wide Frequency Range GHz?

Operation in excess of any one of these conditions may result in permanent damage to this device. Small signal Gain of 18dB?

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For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. Typical ESD diode current versus diode voltage for connected diodes in series Figure Electro Discharge Damage and Control. Typical IM3 level and Ids vs. Broadband Wireless Access including Typical Gain and Reverse Isolation Figure 2.

Negative supply is used for the DC gate biasing. Typical S22 over temperature Figure The drain bias voltage range is 3 to 5V. This method gives an error due to temperature drift of less than 0.

Muting can be accomplished by setting Vgg to the pinch-off voltage Vp. Data subject to change. Vofs can be measured before each detector measurement by removing or switching off the power source and measuring Vref – Vdet.

This method gives an error close to the method 1. The bonding diagram for the recommended assembly is shown in Figure Frequency range 6 to 18 GHz?