BD Transistor Datasheet pdf, BD Equivalent. Parameters and Characteristics. BD BD; NPN Power Transistor. FEATURES High current (max. 3 A) Low voltage (max. 45 V). APPLICATIONS General purpose power applications. BD datasheet, BD circuit, BD data sheet: PHILIPS – NPN power transistor,alldatasheet, datasheet, Datasheet search site for Electronic Components.

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Ic av max The maximum permissible average value of the total collector current. The devices are encapsulated in TO envelopes with all leads insulated from the case.

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O is the reference point for Vj and V. The permissible total power dissipation is dependent upon temperature and its relationship is shown by means of a chart as shown in figure 3. The Pj a j figures take account of the fact that a practical power supply has a finite internal bc131.

The case temperature during solderingmust not at any time exceed the maximum storage temperature. If point P is within this area then the con- ditions are acceptable and the heatsink thermal resistance can be calculated.

A — germanium B — silicon C — compound materials such as gallium arsenide D — compound materials such as indium antimonide R — compound materials such as cadmium sulphide The second letter indicates the general function of the device: Under steady state conditions the total power is given by the expression: Since this is a class A amplifier, 2W will be dissipated in each of the output transistors during the quiescent condition, and this will be the d. On the horizontal axis the forward and reverse-biased base regions are clearly grouped, with the base open-circuit condition dividing the two regions.

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The forward voltage of a diode or diode-connected transistorexternal sensor as a substrate transistorprovided for temperature monitoring on some microprocessors, but it could equally well be a discrete transistor. Examples Vdd, Vss, Vssd 2.

BD131 Datasheet

V min P t Jt max Case No. Type Polarity Outiline Maximum Ratings ‘tot h min.

Icbo Collector cut-off current Vf. Point P is outside the 2ms area which indicates that the condition may be unacceptable. A further decrease of the collector -emitter voltage results in a rapid increase of the distortion of the signal. The leads above this point should be clamped during any lead bending operations. Peak value of the varying component of the emitter current.

Lock ‘B’ of the centre lead will now enter the hole. Reference to standard outline nomenclature if applicable and lead connections. The dqtasheet used is: On printed circuit Note 2 4.

New Jersey Semiconductor

Operation is allowed under all base-emitter conditionsprovided no limiting values are exceeded. I to minimise the variation of input admittance and output conductance with gain control.

This is confined to devices where a flange or stud for fixing onto a heatsink forms an integral part of the envelope. To measure Vbe, the sensor is switched betweentemperature measurement takes nominally 9.

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When using a soldering iron, transistors may be soldered directly into the circuit, but heat conducted to the junction should if possible be kept to a minimum by the use of a thermal shunt. Ierm The maximum permissible instantaneous value of the total reverse emitter current allowable in the reverse breakdown region. More accurate calculations can be made by going back to first principles, and calculating the multiplying factor for the specific condition, f 1 ‘ ‘TP reprinted from MTC No.

V min PiotTiax Case No.

New Jersey Semiconductor BDBD datasheet pdf

EM P t max. Note 1 Mica washer B 1 Supplied 1 Plain washer 1 on request When mounted on dagasheet heatsink it is essential that a plain washer be used to damage to the devices while tightening the mounting screw. Rectangular heatsinks sides a and 2a When mounted with long side horizontal, multiply by 0. Under the overload datwsheet the average power value is calculated as follows: TO-1 construction with envelope isolated.

T m i, The temperature of the surface making contact with a heatsink. Printed circuit board with 1.

The BCY87 and 88 are intended for applications in the pre-stages of differential amplifiers, where low offset, drift and noise are of prime importance.

Therefore the maximum value of Tj-T m b is Q ?