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Preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. They are intended for use in medium power linear and switching applications.

Futurlec, the electronic components and semiconductor. Datasheet identification product status definition advance information. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the datasheef of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.

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Bda datasheet, cross reference, circuit b2d35 application notes in pdf format. Information in this document supersedes and replaces all information previously supplied. Bcw60abcd npn epitaxial silicon transistor classiccmp. Collector-emitter saturation voltage Figure 7. Vishay, disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. Bd abc npn epitaxial silicon transistor read more about voltage, fairchild, semiconductor, collector, datasheet and saturation.

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Technical literature,product development, specification, datasheet, bd, bd created date. A huge range of electronic components at the best prices. Bd, bda, bdb, bdc pnp silicon power transistors 1 june revised september specifications are subject to change without notice.

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Resistive load switching time off Electrical characteristics 2. The nte npn and nte pnp are silicon complementary darlington transistors in a to3 type case designed for generalpurpose amplifier and.

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Safe operating area Figure 3.

However, stmicroelectronics assumes noresponsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties bd35 may result from its use.

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